A semiconductor has an equal electron and hole concentration of 6 x 10^8 / m^3. On doping with certain impurity, electron concentration increases to 4 x 10^10 / m^3.
(i) What type of semiconductor is obtained on doping?
(ii) Calculate the new electron and hole concentration of the semiconductor.
(iii) How does the energy gap vary with doping?
Dear Student ,
(i) n -type semiconductor is formed .
(ii) Here is a link which will help you to solve this question with proper explanation .
https://www.meritnation.com/ask-answer/question/a-semiconductor-has-equal-electrons-nd-hole-concentration-of/semiconductor-electronics-materials-devices-and-simple-circu/7037307
(iii) Energy gap is decreased as on doping the pure semiconductor with pentavalent impurities , donor level is introduced just below the conduction band .
Regards
(i) n -type semiconductor is formed .
(ii) Here is a link which will help you to solve this question with proper explanation .
https://www.meritnation.com/ask-answer/question/a-semiconductor-has-equal-electrons-nd-hole-concentration-of/semiconductor-electronics-materials-devices-and-simple-circu/7037307
(iii) Energy gap is decreased as on doping the pure semiconductor with pentavalent impurities , donor level is introduced just below the conduction band .
Regards