how does an increase in the doping concentration affect the width of the depletion region ? please explain it.

@Nitya,

If we increase, the doping the number if majority charge carriers (holes on p-side and electrons on the n-side) will increase as well. This would mean that the width of the depletion layer, which depends upon the charge carriers, would also increase.

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increases depletion region

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how explain it plz

  • -7

We discuss different cases as follow:

Doping of only p-type is greater: As doping of p type is greater and hence there would be more number of holes per unit area in p-type region and to recombine with electrons of n-type region we need the same number of holes. As we have the more density of holes and hence lesser region would provide enough number of holes and hence depletion width in the p-type would be lesser as shown below:

 

Doping of only n-type is greater: As doping of n type is greater and hence there would be more number of electrons per unit area in n-type region and to recombine with holes of p-type region we need the same number of electrons. As we have the more density of electrons and hence lesser region would provide enough number of electrons and hence depletion width in the n-type would be lesser as shown below:

 

Doping of both p-type & n-type is increased: As doping of both p-type & n-type is greater and hence there would be more number of electrons per unit area in both regions and to develop same level of barrier we need the same number of electrons and holes. As we have the more density of electrons and holes hence lesser region would provide enough number of charge carriers and hence depletion width in the both p-type & n-type would be lesser as shown below:

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i hope this wil help u!! :)

  • -1

Thank u very much sir

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thanxxxxx :)

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