in the ques as asked why the zener diode is heavily doped the answer is given as, it is done to reduce the depletion region but isnt this the case when a diode is in forward bias?(in forward biads depletion region decreases) whereas zener diode is operated in reverse breakdown region right? so dosent this answer contradict the basic fact about zener diode that it is operated in reverse breakdown region and so the depletion region should infact be more but we are doping it so that the region becomes less? pls explain

in the ques as asked why the zener diode is heavily doped the answer is given as, it is done to reduce the depletion region but isnt this the case when a diode is in forward bias?(in forward biads depletion region decreases) whereas zener diode is operated in reverse breakdown region right? so dosent this answer contradict the basic fact about zener diode that it is operated in reverse breakdown region and so the depletion region should infact be more but we are doping it so that the region becomes less? pls explain A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why? Briefly explain the use of zener diode as a de voltage regulator with the help of a circuit diagram. (3) SOLUTION: It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.