The circuit shown below contains two ideal diodes, each with a forward resistance of 50 Ω. If the battery voltage is 6 V, the current through the 100 Ω resistance (in Amperes) is :
Which one of the following best describes the above signal?
then the output across RL will be :
Which of the following statements is correct?
(a) type of semiconductor material
(b) amount of doping
Which one of the following is correct?
In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance 0.02 mho and current gain 20, the voltage gain will be:
Reason The emitter base junction is forward biased and the base collector junction is reversed biased.
In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2k is 2V. If the base resistance is 1k and the current amplification of the transistor is 100, the input signal voltage is :
C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because :
Symbolic representation of four logic gates are shown as
Pick out which ones are for AND, NAND and NOT gates, respectively.
Taking the electronic charge as ‘e’ and the permittivity as ‘’, use dimensional analysis to determine the correct expression for.
Estimate the wavelength at which plasma reflection will occur for a metal having the density of electrons. Take and, where these quantities are in proper SI units.
Reason : Electron hole combination in base result in increase of base current.
Reason : The repeated use of NAND (or NOR) gates can produce all the basic or complicated gates.