Explain forward bias and reverse bias briefly along with the graph
p-n junction diode under forward bias
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p-side is connected to positive terminal and n-side to the negative terminal.
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Applied voltage drops across the depletion region.
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Direction of applied voltage (V) is opposite to the build in potential (V0).
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As the depletion layer width decreases, the barrier height is reduced.
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Effective barrier height under forward bias is (V0 − V).
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Electron in n-region moves towards the p-n junction and holes in p-region move towards the junction. The width of the depletion layer decreases and hence, it offers less resistance.
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Diffusion of majority carriers takes place across the junction.
This leads to forward current.
p-n junction diode under reverse bias
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Positive terminal of battery is connected to n-side and negative terminal to p-side.
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Reverse bias supports the potential barrier. Therefore, the barrier height increases and the width of depletion region also increases.
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Effective barrier height under reverse bias is (V0 + V).
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No conduction across the junction due to majority carriers; few minority carriers cross the junction after being accelerated by high reverse bias voltage
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This constitutes a current that flows in opposite direction − celled reverse current.