Explain forward bias and reverse bias briefly along with the graph

p-n junction diode under forward bias

  • p-side is connected to positive terminal and n-side to the negative terminal.

  • Applied voltage drops across the depletion region.

  • Direction of applied voltage (V) is opposite to the build in potential (V0).

  • As the depletion layer width decreases, the barrier height is reduced.

  • Effective barrier height under forward bias is (V0 − V).

  • Electron in n-region moves towards the p-n junction and holes in p-region move towards the junction. The width of the depletion layer decreases and hence, it offers less resistance.

  • Diffusion of majority carriers takes place across the junction.

This leads to forward current.

p-n junction diode under reverse bias

  • Positive terminal of battery is connected to n-side and negative terminal to p-side.

  • Reverse bias supports the potential barrier. Therefore, the barrier height increases and the width of depletion region also increases.

  • Effective barrier height under reverse bias is (V0 + V).

  • No conduction across the junction due to majority carriers; few minority carriers cross the junction after being accelerated by high reverse bias voltage

  • This constitutes a current that flows in opposite direction − celled reverse current.

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